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High quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:15:54Z
dc.date.available2021-10-16T15:15:54Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11848
dc.sourceIIOimport
dc.titleHigh quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPE
dc.typeOral presentation
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium F: Novel Gain Materials and Devices Based on III-N-V Compounds
dc.source.conferencedate27/05/2007
dc.source.conferencelocationStrassbourg France
imec.availabilityPublished - imec


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