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Interlayer techniques applied in GaN growth on silicon(111) by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorSijmus, Bram
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:16:10Z
dc.date.available2021-10-16T15:16:10Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11850
dc.sourceIIOimport
dc.titleInterlayer techniques applied in GaN growth on silicon(111) by MOVPE
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conference12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII
dc.source.conferencedate3/06/2007
dc.source.conferencelocationBratislava Slovakia
imec.availabilityPublished - imec


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