Show simple item record

AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDerluyn, Joff
dc.contributor.authorBalachander, Krishnan
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:16:17Z
dc.date.available2021-10-16T15:16:17Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11851
dc.sourceIIOimport
dc.titleAlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.conference7th International Conference on Nitride Semiconductors - ICNS-7
dc.source.conferencedate16/09/2007
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record