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Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorSijmus, Bram
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:16:33Z
dc.date.available2021-10-16T15:16:33Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11853
dc.sourceIIOimport
dc.titleEpitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
dc.typeProceedings paper
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.source.peerreviewyes
dc.source.conference7th International Conference on Nitride Semiconductors - ICNS-7
dc.source.conferencedate16/09/2007
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - imec


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