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dc.contributor.authorCho, Hag-Ju
dc.contributor.authorYu, HongYu
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChang, Vincent
dc.contributor.authorSchram, Tom
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorAkheyar, Amal
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWitters, Thomas
dc.contributor.authorDelabie, Annelies
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorRohr, Erika
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorSwerts, Johan
dc.contributor.authorLehnen, Peer
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T15:17:24Z
dc.date.available2021-10-16T15:17:24Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11859
dc.sourceIIOimport
dc.titleNitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage114
dc.source.endpage116
dc.source.conferenceIEEE International Conference on IC Design and Technology - ICICDT
dc.source.conferencedate30/05/2007
dc.source.conferencelocationAustin, TX USA
imec.availabilityPublished - open access


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