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Resistive switching and microstructure of NiO binary oxide films developed for OxRRAM non-volatile memories

dc.contributor.authorCourtade, Lorene
dc.contributor.authorTurquat, Christian
dc.contributor.authorGoguenheim, Didier
dc.contributor.authorMuller, Christophe
dc.contributor.authorLisoni, Judit
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-16T15:24:58Z
dc.date.available2021-10-16T15:24:58Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11915
dc.sourceIIOimport
dc.titleResistive switching and microstructure of NiO binary oxide films developed for OxRRAM non-volatile memories
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage150
dc.source.conference2nd International Conference on Memory Technology and Design - ICMTD
dc.source.conferencedate7/05/2007
dc.source.conferencelocationGiens France
imec.availabilityPublished - open access


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