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AlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?

dc.contributor.authorDas, Jo
dc.contributor.authorOprins, Herman
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:28:18Z
dc.date.available2021-10-16T15:28:18Z
dc.date.issued2007-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11937
dc.sourceIIOimport
dc.titleAlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?
dc.typeProceedings paper
dc.contributor.imecauthorOprins, Herman
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecOprins, Herman::0000-0003-0680-4969
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage277
dc.source.endpage280
dc.source.conference31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate20/05/2007
dc.source.conferencelocationVenice Italy
imec.availabilityPublished - open access


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