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High performance high-k/metal gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant

dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorNicholas, Gareth
dc.contributor.authorBrunco, David
dc.contributor.authorEneman, Geert
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T15:30:56Z
dc.date.available2021-10-16T15:30:56Z
dc.date.issued2007-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11954
dc.sourceIIOimport
dc.titleHigh performance high-k/metal gate Ge pMOSFETs with gate lengths down to 125 nm and halo implant
dc.typeProceedings paper
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage462
dc.source.endpage465
dc.source.conferenceProceedings of the 37th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/2007
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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