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A fully planar stacked gate flash technology with T-shaped floating gate for increased cell coupling ratio

dc.contributor.authorDe Vos, Joeri
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorBlomme, Pieter
dc.contributor.authorDemand, Marc
dc.contributor.authorDevriendt, Katia
dc.contributor.authorVleugels, Frank
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-16T15:37:40Z
dc.date.available2021-10-16T15:37:40Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11996
dc.sourceIIOimport
dc.titleA fully planar stacked gate flash technology with T-shaped floating gate for increased cell coupling ratio
dc.typeProceedings paper
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage243
dc.source.endpage245
dc.source.conferenceProceedings 2nd International Conference on Memory Technology and Design - ICMTD
dc.source.conferencedate7/05/2007
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec


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