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Dark and light-induced bias stress in pentacene field-effect transistors by charge trapping at the organic semiconductor/gate dielectric interface

dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorVerlaak, Stijn
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-16T15:41:19Z
dc.date.available2021-10-16T15:41:19Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12019
dc.sourceIIOimport
dc.titleDark and light-induced bias stress in pentacene field-effect transistors by charge trapping at the organic semiconductor/gate dielectric interface
dc.typeOral presentation
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium E: Probing Electronic Processes at Organic Ssemiconductor Junctions
dc.source.conferencedate26/05/2007
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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