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Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density

dc.contributor.authorDegroote, Bart
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBoullart, Werner
dc.contributor.authorKunnen, Eddy
dc.contributor.authorShamiryan, Denis
dc.contributor.authorWouters, J.
dc.contributor.authorVan Puymbroeck, Jan
dc.contributor.authorDixit, Abhisek
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-16T15:42:14Z
dc.date.available2021-10-16T15:42:14Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12024
dc.sourceIIOimport
dc.titleSpacer defined FinFET: Active area patterning of sub-20 nm fins with high density
dc.typeJournal article
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVan Puymbroeck, Jan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage609
dc.source.endpage618
dc.source.journalMicroelectronic Engineering
dc.source.issue4
dc.source.volume84
imec.availabilityPublished - open access


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