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High-k gate dielectrics on Ge(100): effective electrical passivation using germanium oxide

dc.contributor.authorDelabie, Annelies
dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorConard, Thierry
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-16T15:44:22Z
dc.date.available2021-10-16T15:44:22Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12036
dc.sourceIIOimport
dc.titleHigh-k gate dielectrics on Ge(100): effective electrical passivation using germanium oxide
dc.typeProceedings paper
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conferenceAVS Topical Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate24/07/2007
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access


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