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Atomic layer deposition of hafnium silicate gate dielectric layers

dc.contributor.authorDelabie, Annelies
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHeyns, Marc
dc.contributor.authorFedorenko, Yanina
dc.contributor.authorSwerts, Johan
dc.contributor.authorMaes, Jan
dc.date.accessioned2021-10-16T15:44:48Z
dc.date.available2021-10-16T15:44:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12038
dc.sourceIIOimport
dc.titleAtomic layer deposition of hafnium silicate gate dielectric layers
dc.typeJournal article
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMaes, Jan
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1302
dc.source.endpage1308
dc.source.journalJournal of Vacuum Science and Technology A
dc.source.issue4
dc.source.volume25
imec.availabilityPublished - open access


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