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Ultra-thin gate oxides below 3 nm grown in a cluster tool

dc.contributor.authorDepas, Michel
dc.contributor.authorNigam, Tanya
dc.contributor.authorKenis, Karine
dc.contributor.authorHeyns, Marc
dc.contributor.authorSprey, Hessel
dc.contributor.authorWilhelm, Rudi
dc.date.accessioned2021-09-29T14:27:15Z
dc.date.available2021-09-29T14:27:15Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1205
dc.sourceIIOimport
dc.titleUltra-thin gate oxides below 3 nm grown in a cluster tool
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorSprey, Hessel
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage291
dc.source.endpage294
dc.source.conferenceProceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate23/09/1996
dc.source.conferencelocationAntwerpen Belgium
imec.availabilityPublished - open access


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