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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

dc.contributor.authorDriussi, F.
dc.contributor.authorEsseni, D.
dc.contributor.authorSelmi, L.
dc.contributor.authorSchmidt, M.
dc.contributor.authorLemme, M.
dc.contributor.authorKurz, H.
dc.contributor.authorBuca, D.
dc.contributor.authorMantl, S.
dc.contributor.authorLuysberg, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorReiche, M.
dc.date.accessioned2021-10-16T15:56:10Z
dc.date.available2021-10-16T15:56:10Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12100
dc.sourceIIOimport
dc.titleFabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage315
dc.source.endpage318
dc.source.conferenceProceedings of the 37th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/2007
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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