Show simple item record

Dark current reduction for 2.5mm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-09-29T14:27:53Z
dc.date.available2021-09-29T14:27:53Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1211
dc.sourceIIOimport
dc.titleDark current reduction for 2.5mm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.source.peerreviewno
dc.source.beginpage494
dc.source.endpage495
dc.source.conferenceIPRM 1996.Eighth International Conference on Indium Phosphide and Related Materials; 21-25 April 1996; Schwäbisch-Gmünd, Germany
dc.source.conferencelocation
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record