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Root cause of charge loss in nitride-based localized trapping memory cell

dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-16T16:12:32Z
dc.date.available2021-10-16T16:12:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12178
dc.sourceIIOimport
dc.titleRoot cause of charge loss in nitride-based localized trapping memory cell
dc.typeJournal article
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage1351
dc.source.endpage1359
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue6
dc.source.volume54
imec.availabilityPublished - imec


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