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III-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates

dc.contributor.authorGermain, Marianne
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorLeys, Maarten
dc.contributor.authorDas, Jo
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorCheng, Kai
dc.contributor.authorLorenz, Anne
dc.contributor.authorXiao, Dongping
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T16:14:41Z
dc.date.available2021-10-16T16:14:41Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12188
dc.sourceIIOimport
dc.titleIII-Nitrides electronics at IMEC: latest developments on SiC and large diameter Si substrates
dc.typeProceedings paper
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage337
dc.source.endpage341
dc.source.conference31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate20/05/2007
dc.source.conferencelocationVenice Italy
imec.availabilityPublished - open access


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