Show simple item record

The impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs

dc.contributor.authorGhedini der Agopian, Paula
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T16:15:09Z
dc.date.available2021-10-16T16:15:09Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12190
dc.sourceIIOimport
dc.titleThe impact of the gate oxide thickness reduction on the gate induced floating body effect in SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage305
dc.source.endpage311
dc.source.conferenceMicroelectonics Technology and Devices SBMICRO 2007
dc.source.conferencedate3/09/2007
dc.source.conferencelocationRio de Janeiro Brazil
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol.9, nr.1


Files in this item

Thumbnail
Name:
14906.pdf
Size:
188.0Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record