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TEM characterization of extended defects induced in Si wafers by H-plasma treatment

dc.contributor.authorGhica, C.
dc.contributor.authorNistor, L.C.
dc.contributor.authorBender, Hugo
dc.contributor.authorRichard, Olivier
dc.contributor.authorVan Tendeloo, G.
dc.contributor.authorUlyashin, A.
dc.date.accessioned2021-10-16T16:15:35Z
dc.date.available2021-10-16T16:15:35Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12192
dc.sourceIIOimport
dc.titleTEM characterization of extended defects induced in Si wafers by H-plasma treatment
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage395
dc.source.endpage400
dc.source.journalJournal of Physics D: Applied Physics
dc.source.volume40
imec.availabilityPublished - imec


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