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Switching between two high-resistive states in Cu/chalcogenide/W structures for application in non-volatile memories

dc.contributor.authorGoux, Ludovic
dc.contributor.authorLisoni, Judit
dc.contributor.authorGille, Thomas
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAttenborough, Karen
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-16T16:21:32Z
dc.date.available2021-10-16T16:21:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12218
dc.sourceIIOimport
dc.titleSwitching between two high-resistive states in Cu/chalcogenide/W structures for application in non-volatile memories
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.beginpage151
dc.source.endpage153
dc.source.conferenceProceedings 2nd International Conference on Memory Technology and Design - ICMTD
dc.source.conferencedate7/05/2007
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec


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