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Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

dc.contributor.authorGriffoni, A.
dc.contributor.authorGerardin, S.
dc.contributor.authorCester, A.
dc.contributor.authorPaccagnella, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T16:23:48Z
dc.date.available2021-10-16T16:23:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12228
dc.sourceIIOimport
dc.titleEffects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2257
dc.source.endpage2263
dc.source.journalIEEE Trans. Nuclear Science
dc.source.issue6
dc.source.volume54
imec.availabilityPublished - open access
imec.internalnotesIEEE Nuclear and Space Radiation Effects Conference


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