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Lithography options for the 32nm half pitch node and their implications on resist and material technology

dc.contributor.authorGronheid, Roel
dc.contributor.authorHendrickx, Eric
dc.contributor.authorWiaux, Vincent
dc.contributor.authorMaenhoudt, Mireille
dc.contributor.authorGoethals, Mieke
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorRonse, Kurt
dc.date.accessioned2021-10-16T16:25:00Z
dc.date.available2021-10-16T16:25:00Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12233
dc.sourceIIOimport
dc.titleLithography options for the 32nm half pitch node and their implications on resist and material technology
dc.typeProceedings paper
dc.contributor.imecauthorGronheid, Roel
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorWiaux, Vincent
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.source.peerreviewno
dc.source.beginpage68271V
dc.source.conferenceQuantum Optics, Optical Data Storage, and Advanced Microlithography
dc.source.conferencedate11/11/2007
dc.source.conferencelocationBeijing China
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 6827


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