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Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack

dc.contributor.authorGuo, Wei
dc.contributor.authorNicholas, Gareth
dc.contributor.authorKaczer, Ben
dc.contributor.authorTodi, Ravi
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorClaeys, Cor
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCretu, B.
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorCarin, R.
dc.date.accessioned2021-10-16T16:26:36Z
dc.date.available2021-10-16T16:26:36Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12240
dc.sourceIIOimport
dc.titleLow-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack
dc.typeJournal article
dc.contributor.imecauthorGuo, Wei
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage288
dc.source.endpage291
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume28
imec.availabilityPublished - imec


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