dc.contributor.author | Hayama, K. | |
dc.contributor.author | Takakura, K. | |
dc.contributor.author | Yoneoka, M. | |
dc.contributor.author | Ohyama, H. | |
dc.contributor.author | Rafi, J.M. | |
dc.contributor.author | Mercha, Abdelkarim | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Claeys, Cor | |
dc.date.accessioned | 2021-10-16T16:32:02Z | |
dc.date.available | 2021-10-16T16:32:02Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12261 | |
dc.source | IIOimport | |
dc.title | Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation | |
dc.type | Journal article | |
dc.contributor.imecauthor | Mercha, Abdelkarim | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Mercha, Abdelkarim::0000-0002-2174-6958 | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 2125 | |
dc.source.endpage | 2128 | |
dc.source.journal | Microelectronic Engineering | |
dc.source.issue | 9_10 | |
dc.source.volume | 84 | |
imec.availability | Published - open access | |
imec.internalnotes | Paper from INFOS 2007 | |