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Monitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniques

dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorClauws, P.
dc.contributor.authorKraner, H. W.
dc.contributor.authorVilkelis, G.
dc.date.accessioned2021-09-29T14:29:54Z
dc.date.available2021-09-29T14:29:54Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1228
dc.sourceIIOimport
dc.titleMonitoring of neutron transmutation doped silicon recombination properties by microwave absorption transient techniques
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage439
dc.source.endpage449
dc.source.conferenceProceedings of the 4th International Symposium on High Purity Silicon
dc.source.conferencedate6/10/1996
dc.source.conferencelocationSan Antonio, TX USA
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 96-13


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