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pMOS transistor with embedded SiGe: elastic and plastic relaxation issues

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorBhouri, Nada
dc.contributor.authorLoo, Roger
dc.contributor.authorVerheyen, Peter
dc.contributor.authorClemente, Francesca
dc.contributor.authorHopkins, John
dc.contributor.authorTrussell, Rob
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T16:40:27Z
dc.date.available2021-10-16T16:40:27Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12297
dc.sourceIIOimport
dc.titlepMOS transistor with embedded SiGe: elastic and plastic relaxation issues
dc.typeMeeting abstract
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage145
dc.source.endpage146
dc.source.conference5th International Conference on Silicon Epitaxy and Heterostructures - ICSI-5
dc.source.conferencedate20/05/2007
dc.source.conferencelocationMarseille France
imec.availabilityPublished - imec


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