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First-principles investigation of (100)Ge/Ge(Hf)O2 interfaces

dc.contributor.authorHoussa, Michel
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorBellenger, Florence
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T16:44:41Z
dc.date.available2021-10-16T16:44:41Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12314
dc.sourceIIOimport
dc.titleFirst-principles investigation of (100)Ge/Ge(Hf)O2 interfaces
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage471
dc.source.endpage478
dc.source.conferencePhysics and Technology of High-k Dielectrics
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access
imec.internalnotesECS Trans.; Vol. 11, issue 4


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