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Extraction of the top and sidewall mobility in FinFETs and the impact of fin-patterning processes and gate dielectrics on mobility

dc.contributor.authorIyengar, Vikram V.
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorTranjan, Farid M.
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T16:51:51Z
dc.date.available2021-10-16T16:51:51Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12342
dc.sourceIIOimport
dc.titleExtraction of the top and sidewall mobility in FinFETs and the impact of fin-patterning processes and gate dielectrics on mobility
dc.typeJournal article
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1177
dc.source.endpage1184
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue5
dc.source.volume54
imec.availabilityPublished - open access


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