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Influence of stress-induced leakage current on reliability of HfSiOx

dc.contributor.authorJakschik, S.
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHwang, Young Nam
dc.contributor.authorDuschl, R.
dc.contributor.authorKerber, M.
dc.contributor.authorAvellan, A.
dc.contributor.authorKudelka, S.
dc.date.accessioned2021-10-16T16:53:23Z
dc.date.available2021-10-16T16:53:23Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12348
dc.sourceIIOimport
dc.titleInfluence of stress-induced leakage current on reliability of HfSiOx
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.beginpage310
dc.source.endpage314
dc.source.journalIEEE Trans. Device and Materials Reliability
dc.source.issue2
dc.source.volume7
imec.availabilityPublished - imec


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