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Growth and characterization of mid-infrared InAsSb/InAs strained multiple quantum well light-emitting diodes grown on InAs substrates

dc.contributor.authorGrietens, Bob
dc.contributor.authorNemeth, Stefan
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-29T14:31:09Z
dc.date.available2021-09-29T14:31:09Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1238
dc.sourceIIOimport
dc.titleGrowth and characterization of mid-infrared InAsSb/InAs strained multiple quantum well light-emitting diodes grown on InAs substrates
dc.typeOral presentation
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceMid-infrared Optoelectronics, Materials and Devices; September 17-18, 1996; Lancaster, U.K.
dc.source.conferencelocation
imec.availabilityPublished - imec


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