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Modulation of the effective work function of fully-silicided (FUSI) gate stacks

dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorVeloso, Anabela
dc.contributor.authorYu, HongYu
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorBrus, Stephan
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T17:08:08Z
dc.date.available2021-10-16T17:08:08Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12404
dc.sourceIIOimport
dc.titleModulation of the effective work function of fully-silicided (FUSI) gate stacks
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.beginpage1857
dc.source.endpage1860
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - imec
imec.internalnotesPaper from INFOS 2007


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