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Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully-silicided gate applications

dc.contributor.authorKittl, Jorge
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorTorregiani, Cristina
dc.contributor.authorLauwers, Anne
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorCoia, Cedrik
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorJordan-Sweet, Jean
dc.contributor.authorLavoie, Christian
dc.date.accessioned2021-10-16T17:08:45Z
dc.date.available2021-10-16T17:08:45Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12406
dc.sourceIIOimport
dc.titleTransient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully-silicided gate applications
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.source.peerreviewno
dc.source.beginpage172108
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume91
imec.availabilityPublished - imec


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