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Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal

dc.contributor.authorKubicek, Stefan
dc.contributor.authorSchram, Tom
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVos, Rita
dc.contributor.authorDemand, Marc
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorWitters, Thomas
dc.contributor.authorNyns, Laura
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorYu, HongYu
dc.contributor.authorVeloso, Anabela
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRohr, Erika
dc.contributor.authorBrus, Stephan
dc.contributor.authorVrancken, Christa
dc.contributor.authorChang, Vincent
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorAkheyar, Amal
dc.contributor.authorCho, Hag-Ju
dc.contributor.authorHooker, Jacob
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKerner, Christoph
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T17:13:04Z
dc.date.available2021-10-16T17:13:04Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12422
dc.sourceIIOimport
dc.titleLow VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage49
dc.source.endpage52
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2007
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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