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Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface

dc.contributor.authorLi, Zilan
dc.contributor.authorSchram, Tom
dc.contributor.authorPantisano, Luigi
dc.contributor.authorStesmans, Andre
dc.contributor.authorConard, Thierry
dc.contributor.authorShamuilia, Sheron
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorAkheyar, Amal
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorBrunco, David
dc.contributor.authorDeweerd, Wim
dc.contributor.authorNaoki, Yamada
dc.contributor.authorLehnen, Peer
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T17:29:36Z
dc.date.available2021-10-16T17:29:36Z
dc.date.issued2007-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12483
dc.sourceIIOimport
dc.titleFlat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage34503
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume101
imec.availabilityPublished - imec


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