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Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
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Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Li, Zilan
;
Schram, Tom
;
Pantisano, Luigi
;
Stesmans, Andre
;
Conard, Thierry
;
Shamuilia, Sheron
;
Afanasiev, Valeri
;
Akheyar, Amal
;
Van Elshocht, Sven
;
Brunco, David
;
Deweerd, Wim
;
Naoki, Yamada
;
Lehnen, Peer
;
De Gendt, Stefan
;
De Meyer, Kristin
Journal
Journal of Applied Physics
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2005
since deposited on 2021-10-16
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Acq. date: 2026-08-09
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Statistics
Views
2005
since deposited on 2021-10-16
3
last month
1
last week
Acq. date: 2026-08-09
Citations