Browsing by author "Akheyar, Amal"
Now showing items 1-20 of 31
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1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Yan, L.; Simoen, Eddy; Olsen, S.H.; Akheyar, Amal; Claeys, Cor; O'Neill, A.G. (2009) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Analysis of silicide / diffusion contact resistance making use of transmission line stuctures
Akheyar, Amal; Lauwers, Anne; Lindsay, Richard; de Potter de ten Broeck, Muriel; Tempel, Georg; Maex, Karen (2002) -
Applications of Ni-based silicides to 45 nm CMOS and beyond
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Pawlak, Malgorzata; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Kottantharayil, Anil; Pourtois, Geoffrey; Lindsay, Richard; Maex, Karen (2004) -
Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Akheyar, Amal; Lauwers, Anne; Kittl, Jorge; de Potter de ten Broeck, Muriel; Chamirian, Oxana; Jonckheere, Rik; Leunissen, Peter; Van Dal, Mark; Lindsay, Richard; Tempel, Georg; Maex, Karen (2003) -
Edge effects and tilt dependency of heavy ion SEE characterization in pn junctions
Berger, G.; Moreno, L.; Martinez, I.; Akheyar, Amal; Harboe-Sorensen, R.; Ryckewaert, G.; Flandre, D. (2002) -
Effects of alloying on properties of NiSi for CMOS applications
Van Dal, Mark; Akheyar, Amal; Kittl, Jorge; Chamirian, Oxana; de Potter de ten Broeck, Muriel; Demeurisse, Caroline; Lauwers, Anne; Maex, Karen (2004) -
Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Chang, Shou-Zen; Yu, Hong-Yu; Adelmann, Christoph; Delabie, Annelies; Wang, Xin Peng; Van Elshocht, Sven; Akheyar, Amal; Nyns, Laura; Swerts, Johan; Aoulaiche, Marc; Kerner, Christoph; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2008-05) -
Flash memory with high-k tunnel dielectrics: comparative retention study
Blomme, Pieter; Akheyar, Amal; Van Houdt, Jan; De Meyer, Kristin (2005) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02) -
Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
Li, Zilan; Schram, Tom; Pantisano, Luigi; Witters, Thomas; Stesmans, Andre; Akheyar, Amal; Afanasiev, Valeri; Yamada, Naoki; Tsunoda, Takaaki; De Gendt, Stefan; De Meyer, Kristin (2007) -
High-k materials for tunnel barrier engineering in future memory technologies
Blomme, Pieter; Govoreanu, Bogdan; Rosmeulen, Maarten; Akheyar, Amal; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2004-10) -
Higk-k materials for tunnel barrier engineering in floating-gate flash memories
Blomme, Pieter; Govoreanu, Bogdan; Rosmeulen, Maarten; Akheyar, Amal; Haspeslagh, Luc; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan; De Meyer, Kristin (2005) -
Impact of advanced gate stack engineering on low frequency noise performances of planar bulk CMOS transistors
Mercha, Abdelkarim; Okawa, H.; Akheyar, Amal; Simoen, Eddy; Nakabayashi, T.; Hoffmann, Thomas Y. (2009) -
Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Kubicek, Stefan; Schram, Tom; Paraschiv, Vasile; Vos, Rita; Demand, Marc; Adelmann, Christoph; Witters, Thomas; Nyns, Laura; Ragnarsson, Lars-Ake; Yu, HongYu; Veloso, Anabela; Singanamalla, Raghunath; Kauerauf, Thomas; Rohr, Erika; Brus, Stephan; Vrancken, Christa; Chang, Vincent; Mitsuhashi, Riichirou; Akheyar, Amal; Cho, Hag-Ju; Hooker, Jacob; O'Sullivan, Barry; Chiarella, Thomas; Kerner, Christoph; Delabie, Annelies; Van Elshocht, Sven; De Meyer, Kristin; De Gendt, Stefan; Absil, Philippe; Hoffmann, Thomas Y.; Biesemans, Serge (2007) -
Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
Simoen, Eddy; Akheyar, Amal; Rohr, Erika; Mercha, Abdelkarim; Claeys, Cor (2009) -
Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
Simoen, Eddy; Akheyar, Amal; Rohr, Erika; Mercha, Abdelkarim; Claeys, Cor (2009) -
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007) -
Ni- and Co-based silicides for advanced CMOS applications
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Lindsay, Richard; Maex, Karen (2003) -
Ni-based silicides: material issues for advanced CMOS applications
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Van Dal, Mark; Akheyar, Amal; Richard, Olivier; Lisoni, Judit; de Potter de ten Broeck, Muriel; Lindsay, Richard; Maex, Karen (2003)