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Conference contributions
Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
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Low-frequency noise analysis of the impact of an LaO cap layer in HfSiON/Ta2C gate stack nMOSFETs
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Date
2009
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Akheyar, Amal
;
Rohr, Erika
;
Mercha, Abdelkarim
;
Claeys, Cor
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1934
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Acq. date: 2026-02-24
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Statistics
Views
1934
since deposited on 2021-10-18
2
last month
Acq. date: 2026-02-24
Citations