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Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
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Authors
Chang, Shou-Zen
;
Yu, Hong-Yu
;
Adelmann, Christoph
;
Delabie, Annelies
;
Wang, Xin Peng
;
Van Elshocht, Sven
;
Akheyar, Amal
;
Nyns, Laura
;
Swerts, Johan
;
Aoulaiche, Marc
;
Kerner, Christoph
;
Absil, Philippe
;
Hoffmann, Thomas Y.
;
Biesemans, Serge
ISSN
0741-3106
Issue
5
Journal
IEEE Electron Device Letters
Volume
29
Title
Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
Publication type
Journal article
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