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Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
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1916 since deposited on 2021-10-17
Acq. date: 2026-07-17
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Statistics
Views
1916 since deposited on 2021-10-17
Acq. date: 2026-07-17
Citations