Publication:
Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel
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1905 since deposited on 2021-10-17
2last month
Acq. date: 2025-12-08
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Metrics
Views
1905 since deposited on 2021-10-17
2last month
Acq. date: 2025-12-08
Citations