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Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel

Date

2008-05
Journal article
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dc.contributor.authorChang, Shou-Zen
dc.contributor.authorYu, Hong-Yu
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorDelabie, Annelies
dc.contributor.authorWang, Xin Peng
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAkheyar, Amal
dc.contributor.authorNyns, Laura
dc.contributor.authorSwerts, Johan
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKerner, Christoph
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.date.accessioned2021-10-17T06:29:11Z
dc.date.available2021-10-17T06:29:11Z
dc.date.issued2008-05
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13499
dc.source.beginpage430
dc.source.endpage433
dc.source.issue5
dc.source.journalIEEE Electron Device Letters
dc.source.volume29
dc.title

Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel

dc.typeJournal article
dspace.entity.typePublication
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