Browsing by author "Schram, Tom"
Now showing items 1-20 of 249
-
2D materials: roadmap to CMOS integration
Huyghebaert, Cedric; Schram, Tom; Smets, Quentin; Agarwal Kumar, Tarun; Verreck, Devin; Brems, Steven; Phommahaxay, Alain; Chiappe, Daniele; El Kazzi, Salim; Lockhart de la Rosa, Cesar Javier; Arutchelvan, Goutham; Cott, Daire; Ludwig, Jonathan; Gaur, Abhinav; Sutar, Surajit; Leonhardt, Alessandra; Marinov, Daniil; Lin, Dennis; Caymax, Matty; Asselberghs, Inge; Pourtois, Geoffrey; Radu, Iuliana (2018) -
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
Koladi Mootheri, Vivek; Okuyama, Atsushi; Smets, Quentin; Schram, Tom; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2020) -
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Cho, Moon Ju; Noh, Kyung Bong; Son, Yunik; Na, Hoon Jo; Kauerauf, Thomas; Douhard, Bastien; Nazir, Aftab; Chew, Soon Aik; Milenin, Alexey; Altamirano Sanchez, Efrain; Schoofs, Geert; Albert, Johan; Sebaai, Farid; Vecchio, Emma; Paraschiv, Vasile; Vandervorst, Wilfried; Lee, Sun Ghil; Collaert, Nadine; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction
Yu, Hao; Schaekers, Marc; Schram, Tom; Collaert, Nadine; De Meyer, Kristin; Horiguchi, Naoto; Thean, Aaron; Barla, Kathy (2014) -
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Ji, Z.; Zhang, J.F.; Lin, L.; Duan, M.; Zhang, W.; Zhang, X.; Gao, R.; Kaczer, Ben; Franco, Jacopo; Schram, Tom; Horiguchi, Naoto; De Gendt, Stefan; Groeseneken, Guido (2015) -
Accurate prediction of device performance : Reconstructing 2D-active dopant profiles from 2D-carrier profiles in the presence of extensive mobile carrier diffusion
Nazir, Aftab; Eyben, Pierre; Clarysse, Trudo; Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Vandervorst, Wilfried (2014) -
Accurate prediction of device performance based on 2-D carrier profiles in the presence of extensive mobile carrier diffusion
Nazir, Aftab; Spessot, Alessio; Eyben, Pierre; Clarysse, Trudo; Ritzenthaler, Romain; Schram, Tom; Vandervorst, Wilfried (2014) -
Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
Ragnarsson, Lars-Ake; Chang, Vincent; Yu, HongYu; Cho, Hag-Ju; Conard, Thierry; Yin, KaiMin; Delabie, Annelies; Swerts, Johan; Schram, Tom; De Gendt, Stefan; Biesemans, Serge (2007-06) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advanced doping techniques for DRAM peripheral MOSFETs
Spessot, Alessio; Ritzenthaler, Romain; Schram, Tom; Aoulaiche, Marc; Cho, Moon Ju; Toledano Luque, Maria; Fazan, Pierre (2015) -
Al-induced defect generation in cubic phase HfO2/SiO2/Si gate stacks
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Veloso, Anabela; Adelmann, Christoph; Degraeve, Robin; Schram, Tom; Chew, Soon Aik; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2012) -
ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; van Bael, M.K.; Blomberg, T.; Pieereux, D.; Swerts, J.; Maes, J.W.; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2008) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; Van Bael, Marlies; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2009) -
An ultra-thin hybrid floating gate concept for sub-20nm NAND flash technologies
Wellekens, Dirk; Blomme, Pieter; Rosmeulen, Maarten; Schram, Tom; Cacciato, Antonio; Van Aerde, Steven; Debusschere, Ingrid; Van Houdt, Jan (2011)