Publication:
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Date
Loading...
Files
Journal
Abstract
Description
Metrics
Downloads
1 since deposited on 2021-10-22
Acq. date: 2025-10-24
Views
2023 since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations
Metrics
Downloads
1 since deposited on 2021-10-22
Acq. date: 2025-10-24
Views
2023 since deposited on 2021-10-22
Acq. date: 2025-10-24
Citations