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A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
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Acq. date: 2026-01-09
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Acq. date: 2026-01-09
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1 since deposited on 2021-10-22
Acq. date: 2026-01-09
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2025 since deposited on 2021-10-22
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Acq. date: 2026-01-09
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