Authors

Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron

Conference

IEEE Symposium on VLSI Technology

Title

A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Publication type

Proceedings paper

Embargo date

9999-12-31