Browsing by author "Mocuta, Anda"
Now showing items 1-20 of 121
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A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Mitard, Jerome; Witters, Liesbeth; Sasaki, Yuichiro; Arimura, Hiroaki; Schulze, Andreas; Loo, Roger; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Cott, Daire; Chiarella, Thomas; Kubicek, Stefan; Mertens, Hans; Ritzenthaler, Romain; Vrancken, Christa; Favia, Paola; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Mocuta, Dan; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016-06) -
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, AliReza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio (2015) -
Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations
Eyben, Pierre; Matagne, Philippe; Chiarella, Thomas; De Keersgieter, An; Kubicek, Stefan; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Mocuta, Dan (2016) -
An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
An in-depth study of high-performing strained germanium nanaowires pFETs
Mitard, Jerome; Jang, Doyoung; Eneman, Geert; Arimura, Hiroaki; Parvais, Bertrand; Richard, Olivier; Van Marcke, Patricia; Witters, Liesbeth; Capogreco, Elena; Bender, Hugo; Ritzenthaler, Romain; Mertens, Hans; Hikavyy, Andriy; Loo, Roger; Dekkers, Harold; Sebaai, Farid; Horiguchi, Naoto; Mocuta, Anda; Collaert, Nadine (2018) -
Analysis of diffusion mechanisms for SSD in confined volumes : An alternative solution for extension formation in N7 and N5 technologies
Eyben, Pierre; Pawlak, Bartek; De Keersgieter, An; Kikuchi, Yoshiaki; Mitard, Jerome; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda (2018) -
Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD models
Betti Beneventi, G.; Reggiani, S.; Gnudi, A.; Gnani, E.; Alian, AliReza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, G. (2015) -
Assessment of SiGe quantum well transistors for DRAM peripheral applications
Ritzenthaler, Romain; Schram, Tom; Eneman, Geert; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015) -
Backside power delivery as a scaling knob for future systems
Chava, Bharani; Shaik, Khaja Ahmad; Jourdain, Anne; Guissi, Sofiane; Weckx, Pieter; Ryckaert, Julien; Van der Plas, Geert; Spessot, Alessio; Beyne, Eric; Mocuta, Anda (2019) -
Band offsets in biaxially stressed SiGe layers for arbitrary orientations
Eneman, Geert; Roussel, Philippe; Brunco, David; Collaert, Nadine; Mocuta, Anda; Thean, Aaron (2016) -
Band-to-band tunneling off-state leakage in Ge fins and nanowires: effect of quantum confinement
Eneman, Geert; Verhulst, Anne; Smith, Lee; Moroz, Victor; De Keersgieter, An; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016) -
Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors
Verreck, Devin; Verhulst, Anne; Xiang, Yang; Yakimets, Dmitry; El Kazzi, Salim; Parvais, Bertrand; Groeseneken, Guido; Collaert, Nadine; Mocuta, Anda (2018) -
Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction
Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Gundlach, David; Richter, Curt; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Heyns, Marc (2016) -
Calibration of the high-doping induced ballistic band-tails tunneling current in In0.53Ga0.47As Esaki diodes
Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Collaert, Nadine; Mocuta, Anda; Soree, Bart; Groeseneken, Guido (2017) -
CDM-time domain turn-on transient of ESD diodes in bulk FinFET and GAA NW technologies
Chen, Shih-Hung; Linten, Dimitri; Hellings, Geert; Simicic, Marko; Kaczer, Ben; Chiarella, Thomas; Mertens, Hans; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto (2019) -
CFET standard-cell design down to 3Track height for node 3nm and below
Sherazi, Yasser; Chae, Jung Kyu; Debacker, Peter; Mattii, Luca; Verkest, Diederik; Mocuta, Anda; Kim, Ryan Ryoung han; Spessot, Alessio; Dounde, Amit; Ryckaert, Julien (2019) -
Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup
Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018) -
Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects
Vaisman Chasin, Adrian; Bury, Erik; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Linten, Dimitri; Mocuta, Anda (2017)