Browsing by author "del Agua Borniquel, Jose Ignacio"
Now showing items 1-19 of 19
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300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility
Kljucar, Luka; Smets, Quentin; van Setten, Michiel; Mitard, Jerome; Belmonte, Attilio; Dekkers, Harold; Teugels, Lieve; Mao, Ming; Puliyalil, Harinarayanan; del Agua Borniquel, Jose Ignacio; Delhougne, Romain; Sankaran, Kiroubanand; Tokei, Zsolt (2020) -
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation
Zschaetzsch, Gerd; Vandervorst, Wilfried; Hoffmann, Thomas; Goossens, Jozefien; Everaert, Jean-Luc; del Agua Borniquel, Jose Ignacio; Poon, T. (2008) -
Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Wang, Linlin; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Franquet, Alexis; Douhard, Bastien; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, J.Y.; van Meer, Hans; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin; Jiang, Yu-Long (2017) -
Conformal doping of FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Everaert, Jean-Luc; Rosseel, Erik; Jurczak, Gosia; Hoffmann, Thomas; Eyben, Pierre; Mody, Jay; Zschaetzsch, Gerd; Koelling, Sebastian; Gilbert, Matthieu; Poon, T.; del Agua Borniquel, Jose Ignacio; Foad, M.; Duffy, Ray; Pawlak, Bartek (2008) -
Fundamental study on the impact of C Co-implantation on ultra shallow B junctions
Zschaetzsch, Gerd; Vandervorst, Wilfried; Hoffmann, Thomas Y.; Everaert, Jean-Luc; del Agua Borniquel, Jose Ignacio (2009) -
GaN-Epi-Layer auf 200mm-Si-Substraten für LEDs
Cheng, Kai; Dekoster, Johan; Jun, Sung Won; del Agua Borniquel, Jose Ignacio (2011-08) -
IGZO integration scheme for enabling IGZO nFETs
Kljucar, Luka; Mitard, Jerome; Rassoul, Nouredine; Dekkers, Harold; Steudel, Soeren; del Agua Borniquel, Jose Ignacio; De Wachter, Bart; Teugels, Lieve; Tsvetanova, Diana; Devriendt, Katia; Grisin, Ilja; Boccardi, Guillaume; Hody, Hubert; Nag, Manoj; Di Piazza, Luca; Wilson, Chris; Kar, Gouri Sankar; Tokei, Zsolt; Ramalingam, J.; Cao, Yong; Diehl, Daniel L. (2019) -
Meeting the doping challenges of device scaling
Vandervorst, Wilfried; Jurczak, Gosia; Foad, Majeed; del Agua Borniquel, Jose Ignacio; Porshnev, Peter; Everaert, Jean-Luc; Poon, Tze (2007) -
Meeting the doping challenges: the case for plasma doping
del Agua Borniquel, Jose Ignacio; Poon, Tze; Porshnev, Pete; Jurczak, Gosia; Everaert, Jean-Luc; Vandervorst, Wilfried (2008) -
Poly- silicon etch with diluted ammonia: Application to replacement gate integration scheme
Sebaai, Farid; del Agua Borniquel, Jose Ignacio; Vos, Rita; Absil, Philippe; Chiarella, Thomas; Vrancken, Christa; Boelen, Pieter; Evans, Baiya (2008) -
Poly- silicon etch with diluted ammonia: application to replacement gate integration scheme
Sebaai, Farid; del Agua Borniquel, Jose Ignacio; Vos, Rita; Absil, Philippe; Chiarella, Thomas; Vrancken, Christa; Boelen, Pieter; Baiya, Evans (2009) -
Probing doping conformality in FINFET structures using resistors
Vandervorst, Wilfried; Jurczak, Gosia; Everaert, Jean-Luc; Pawlak, Bartek; del Agua Borniquel, Jose Ignacio (2007) -
Process control & integration options of RMG Technology for aggressively scaled devices
Veloso, Anabela; Higuchi, Yuichi; Chew, Soon Aik; Devriendt, Katia; Ragnarsson, Lars-Ake; Sebaai, Farid; Schram, Tom; Brus, Stephan; Vecchio, Emma; Kellens, Kristof; Rohr, Erika; Eneman, Geert; Simoen, Eddy; Cho, Moon Ju; Paraschiv, Vasile; Crabbe, Yvo; Shi, Xiaoping; Tielens, Hilde; Van Ammel, Annemie; Dekkers, Harold; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; del Agua Borniquel, Jose Ignacio; Xu, K.; Allen, M.; Liu, C.; Xu, T.; Yoo, W.S.; Thean, Aaron; Horiguchi, Naoto (2012) -
Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
Everaert, Jean-Luc; Schaekers, Marc; Yu, Hao; Wang, Linlin; Hikavyy, Andriy; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, JaeYoung; van Meer, Hans; Jiang, Yu-Long; De Meyer, Kristin; Mocuta, Dan; Horiguchi, Naoto (2017) -
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Mitard, Jerome; Kljucar, Luka; Rassoul, Nouredine; Dekkers, Harold; van Setten, Michiel; Vaisman Chasin, Adrian; Pourtois, Geoffrey; Belmonte, Attilio; Donadio, Gabriele Luca; Goux, Ludovic; Mao, Ming; Puliyalil, Harinarayanan; Teugels, Lieve; Tsvetanova, Diana; Nag, Manoj; Steudel, Soeren; del Agua Borniquel, Jose Ignacio; Ramalingam, Jothilingam; Delhougne, Romain; Wilson, Chris; Tokei, Zsolt; Kar, Gouri Sankar (2020) -
Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In-Ga-Zn Oxide Thin-Film Transistors
Glushkova, Anastasia, V; Dekkers, Harold; Nag, Manoj; del Agua Borniquel, Jose Ignacio; Ramalingam, Jothilingam; Genoe, Jan; Heremans, Paul; Rolin, Cedric (2021) -
Thick high quality GaN layers grown on 200mm Si(111) substrates by MOVPE
Cheng, Kai; Westwater, Simon; Leys, Maarten; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, S.W.; Bour, D.P. (2011)