Browsing by author "Colombeau, Benjamin"
Now showing items 1-4 of 4
-
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Togo, Mitsuhiro; Sasaki, Yuichiro; Zschaetzsch, Gerd; Boccardi, Guillaume; Ritzenthaler, Romain; Lee, Jae Woo; Khaja, Fareen; Colombeau, Benjamin; Godet, Ludovic; Martin, Patrick; Brus, Stephan; Altamirano Sanchez, Efrain; Mannaert, Geert; Dekkers, Harold; Hellings, Geert; Horiguchi, Naoto; Vandervorst, Wilfried; Thean, Aaron (2013) -
Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Ragnarsson, Lars-Ake; Chew, Soon Aik; Dekkers, Harold; Toledano Luque, Maria; Parvais, Bertrand; De Keersgieter, An; Van Ammel, Annemie; Schram, Tom; Yoshida, Naomi; Phatak, Anup; Han, Keping; Colombeau, Benjamin; Brand, Adam; Horiguchi, Naoto; Thean, Aaron (2014) -
Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Sasaki, Yuichiro; Godet, Ludovic; Chiarella, Thomas; Brunco, David; Rockwell, Tyler; Lee, Jae Woo; Colombeau, Benjamin; Togo, Mitsuhiro; Chew, Soon Aik; Zschaetzsch, Gerd; Noh, Kyung Bong; De Keersgieter, An; Boccardi, Guillaume; Kim, Min-Soo; Hellings, Geert; Martin, Patrick; Vandervorst, Wilfried; Thean, Aaron; Horiguchi, Naoto (2013)