Browsing by author "Chew, Soon Aik"
Now showing items 1-20 of 44
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3D simulation for melt laser anneal integration in FinFET's contact
Tabata, Toshiyuki; Curvers, Benoit; Huet, Karim; Chew, Soon Aik; Everaert, Jean-Luc; Horiguchi, Naoto (2020) -
A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Sasaki, Yuichiro; Ritzenthaler, Romain; De Keersgieter, An; Chiarella, Thomas; Kubicek, Stefan; Rosseel, Erik; Waite, Andrew; del Agua Borniquel, Jose Ignacio; Colombeau, Benjamin; Chew, Soon Aik; Kim, Min-Soo; Schram, Tom; Demuynck, Steven; Vandervorst, Wilfried; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda; Thean, Aaron (2015-06) -
A low-power HKMG CMOS platform compatible with DRAM node 2x and beyond
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Cho, Moon Ju; Noh, Kyung Bong; Son, Yunik; Na, Hoon Jo; Kauerauf, Thomas; Douhard, Bastien; Nazir, Aftab; Chew, Soon Aik; Milenin, Alexey; Altamirano Sanchez, Efrain; Schoofs, Geert; Albert, Johan; Sebaai, Farid; Vecchio, Emma; Paraschiv, Vasile; Vandervorst, Wilfried; Lee, Sun Ghil; Collaert, Nadine; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
A new high-k/metal gate CMOS integration scheme (Diffusion and Gate Replacement) suppressing gate height asymmetry and compatible with high-thermal budget memory technologies
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Fazan, Pierre; Horiguchi, Naoto; Thean, Aaron (2014) -
Al-induced defect generation in cubic phase HfO2/SiO2/Si gate stacks
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Veloso, Anabela; Adelmann, Christoph; Degraeve, Robin; Schram, Tom; Chew, Soon Aik; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2012) -
Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
Hikavyy, Andriy; Kubicek, Stefan; Chew, Soon Aik; Boccardi, Guillaume; Favia, Paola; Eneman, Geert; Loo, Roger (2013) -
Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
Hikavyy, Andriy; Chew, Soon Aik; Boccardi, Guillaume; Favia, Paola; Loo, Roger (2013) -
Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Fazan, Pierre; Thean, Aaron (2016) -
Dummy design characterization for STI CMP with fixed abrasive
Tsvetanova, Diana; Devriendt, Katia; Ong, Patrick; Vandeweyer, Tom; Delande, Tinne; Chew, Soon Aik; Horiguchi, Naoto; Struyf, Herbert (2014-11) -
Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
Kikuchi, Yoshiaki; Chiarella, Thomas; De Roest, David; Blanquart, Timothee; De Keersgieter, An; Kenis, Karine; Peter, Antony; Ong, Patrick; Van Besien, Els; Tao, Zheng; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Schram, Tom; Demuynck, Steven; Mocuta, Anda; Mocuta, Dan; Horiguchi, Naoto (2016) -
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016) -
Gate-all-around transistors based on vertically stacked Si nanowires
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Mannaert, Geert; De Keersgieter, An; Vaisman Chasin, Adrian; Kubicek, Stefan; Dangol, Anish; Demuynck, Steven; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto (2017) -
Heterostructure at CMOS source/drain: contributor or alleviator to the high access resistance problem?
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Everaert, Jean-Luc; Eyben, Pierre; Chiarella, Thomas; Merckling, Clement; Agarwal Kumar, Tarun; Pourtois, Geoffrey; Hikavyy, Andriy; Kubicek, Stefan; Witters, Liesbeth; Sibaja-Hernandez, Arturo; Mitard, Jerome; Waldron, Niamh; Chew, Soon Aik; Demuynck, Steven; Horiguchi, Naoto; Barla, Kathy; Thean, Aaron; Mocuta, Anda; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2016) -
Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Ragnarsson, Lars-Ake; Chew, Soon Aik; Dekkers, Harold; Toledano Luque, Maria; Parvais, Bertrand; De Keersgieter, An; Van Ammel, Annemie; Schram, Tom; Yoshida, Naomi; Phatak, Anup; Han, Keping; Colombeau, Benjamin; Brand, Adam; Horiguchi, Naoto; Thean, Aaron (2014) -
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Lee, Jae Won; Simoen, Eddy; Roussel, Philippe; Cho, Moon Ju; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Brus, Stephan; Dangol, Anish; Paraschiv, Vasile; Vecchio, Emma; Shi, Xiaoping; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Richard, Olivier; Bender, Hugo; Chiarella, Thomas; Arimura, Hiroaki; Thean, Aaron; Horiguchi, Naoto (2013) -
Implementing cubic-phase HfO2 with $j-value ~ 30 in low-VT replacementgate pMOS devices for improved EOT-Scaling and reliability
Ragnarsson, Lars-Ake; Adelmann, Christoph; Higuchi, Yuichi; Opsomer, Karl; Veloso, Anabela; Chew, Soon Aik; Rohr, Erica; Vecchio, Emma; Shi, Xiaoping; Devriendt, Katia; Sebaai, Farid; Kauerauf, Thomas; Pawlak, Malgorzata; Schram, Tom; Van Elshocht, Sven; Horiguchi, Naoto; Thean, Aaron (2012) -
Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Sasaki, Yuichiro; Godet, Ludovic; Chiarella, Thomas; Brunco, David; Rockwell, Tyler; Lee, Jae Woo; Colombeau, Benjamin; Togo, Mitsuhiro; Chew, Soon Aik; Zschaetzsch, Gerd; Noh, Kyung Bong; De Keersgieter, An; Boccardi, Guillaume; Kim, Min-Soo; Hellings, Geert; Martin, Patrick; Vandervorst, Wilfried; Thean, Aaron; Horiguchi, Naoto (2013) -
Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation
Kikuchi, Yoshiaki; Hopf, Toby; Mannaert, Geert; Tao, Zheng; Waite, A.; Cournoyer, J.; Borniquel, J.; Schreutelkamp, Rob; Ritzenthaler, Romain; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Devriendt, Katia; Schram, Tom; Demuynck, Steven; Variam, N.; Horiguchi, Naoto; Mocuta, Dan (2016)