Publication:
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
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1 since deposited on 2021-10-23
Acq. date: 2026-01-10
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2028 since deposited on 2021-10-23
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Acq. date: 2026-01-10
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1 since deposited on 2021-10-23
Acq. date: 2026-01-10
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2028 since deposited on 2021-10-23
5last month
3last week
Acq. date: 2026-01-10
Citations