Publication:

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Date

2016
Proceedings Paper
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dc.contributor.authorMertens, Hans
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorKim, Min-Soo
dc.contributor.authorTao, Zheng
dc.contributor.authorWostyn, Kurt
dc.contributor.authorChew, Soon Aik
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMannaert, Geert
dc.contributor.authorRosseel, Erik
dc.contributor.authorSchram, Tom
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorDekkers, Harold
dc.contributor.authorDemuynck, Steven
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorVan Besien, Els
dc.contributor.authorDangol, Anish
dc.contributor.authorGodny, Stephane
dc.contributor.authorDouhard, Bastien
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorDangol, Anish
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorGeypen, Jef
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T12:48:26Z
dc.date.available2021-10-23T12:48:26Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27005
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573416
dc.source.beginpage1
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate13/06/2016
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage2
dc.title

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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