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Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Publication:
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Date
2016
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mertens, Hans
;
Ritzenthaler, Romain
;
Hikavyy, Andriy
;
Kim, Min-Soo
;
Tao, Zheng
;
Wostyn, Kurt
;
Chew, Soon Aik
;
De Keersgieter, An
;
Mannaert, Geert
;
Rosseel, Erik
;
Schram, Tom
;
Devriendt, Katia
;
Tsvetanova, Diana
;
Dekkers, Harold
;
Demuynck, Steven
;
Vaisman Chasin, Adrian
;
Van Besien, Els
;
Dangol, Anish
;
Godny, Stephane
;
Douhard, Bastien
;
Bosman, Niels
;
Richard, Olivier
;
Geypen, Jef
;
Bender, Hugo
;
Barla, Kathy
;
Mocuta, Dan
;
Horiguchi, Naoto
;
Thean, Aaron
Journal
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since deposited on 2021-10-23
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since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations